Journal article
Near-Surface Electrical Characterization of Silicon Electronic Devices Using Focused keV-Range Ions
SG Robson, P Räcke, AM Jakob, N Collins, HR Firgau, V Schmitt, V Mourik, A Morello, E Mayes, D Spemann, DN Jamieson
Physical Review Applied | Published : 2022
Abstract
The demonstration of universal quantum logic operations near the fault-tolerance threshold has established ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring a few-hundred-nanometer interdonor spacing. Here, we explore the feasibility of this approach by implanting low-energy ions into silicon devices featuring a 60×60μm2 sensitive area and an ultrathin 3.2-nm gate oxide - capable of hosting large-scale donor arrays. We employ a characterization system consisting of a modified focused-ion-beam machine and ultr..
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Grants
Awarded by Army Research Office
Funding Acknowledgements
This work was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Grant No. CE170100012) and the U.S. Army Research Office (Contract No. W911NF-17-1-0200) . This work was performed in part in the NSW Node of the Australian National Fabrication Facility at the UNSW Sydney. S.G.R., P.R., and A.M.J. acknowledge an Australia -Germany Joint Research Coop- eration Scheme (UA-DAAD) travel scholarship that sup- ported collaboration between partner institutions. S.G.R. acknowledges additional travel support from the Laby Foundation Pty Ltd. S.G.R., N.C., and H.R.F. acknowl- edge support from an Australian Government Research Training Program Scholarship. P.R. and D.S. gratefully acknowledge funding by the Leibniz Association (SAW-2015 -IOM -1) and the European Union, together with the Schsisches Ministerium fur Wissenschaft und Kunst (Project No. 100308873) . The code for the Crystal-TRIM simulations performed in this work was developed by M. Posselt of Helmholtz-Zentrum Dresden-Rossendorf. The authors acknowledge the facilities, and the scientific and technical assistance, of the RMIT Microscopy & Micro- analysis Research Facility at RMIT University as well as the assistance of J. Bauer and of A. Finzel, both of the Leipzig Institute of Surface Engineering (IOM) , the for- mer for performing additional electron microscopy and the latter for performing atomic force microscopy. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Office or the U.S. Government. The U.S. Gov- ernment is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation herein.